J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
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Journal ArticleDOI
Optical Properties of Quantum Dashes
Grzegorz Sęk,Anna Musiał,Paweł Mrowiński,A. Maryński,J. Andrzejewski,Jan Misiewicz,Andre Somers,Alfred Forchel,Sven Höfling +8 more
TL;DR: In this paper, optical properties of strongly in-plane elongated nanostructures were investigated in a spectroscopic manner on both the entire ensemble and on the single dash level.
Journal ArticleDOI
Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction
Leszek Bryja,M. Kubisa,Krzysztof Ryczko,Jan Misiewicz,R. Stȩpniewski,M. Byszewski,Marek Potemski,Dirk Reuter,Andreas D. Wieck +8 more
TL;DR: In this article, a detailed investigation of low temperature polarisation-resolved photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunctions in magnetic field up to 23 T applied perpendicular to the structure was performed.
Journal ArticleDOI
Photoluminescence of quaternary manganese based semimagnetic semiconductors
TL;DR: In this article, the bound magnetic polaron effect in quaternary semimagnetic semiconductors: cubic Zn0.1Cd0.89Mn 0.01Se0.3Te0.7 was studied by means of photo-luminescence measurements.
Proceedings ArticleDOI
Photoluminescence of the yttrium aluminum composites doped with various concentrations of terbium
TL;DR: The photoluminescence of these structures is investigated in this article, where the composites with various terbium concentrations are synthesized in the silicon-based porous anodic alumina by the coprecipitation method from solutions of yttrium, aluminum, and terbinium nitrates.
Proceedings ArticleDOI
Photoreflectance spectroscopy for investigations of semiconductor structures
TL;DR: In this article, a non-destructive, contactless, room temperature method for photoreflectance spectroscopy of semiconductor layers, interfaces, structures and devices is described.