J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
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The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
Robert Kudrawiec,Ville-Markus Korpijärvi,P. Poloczek,Jan Misiewicz,Pekka Laukkanen,Janne Pakarinen,Mihail Dumitrescu,Mircea Guina,M. Pessa +8 more
TL;DR: In this article, the energy fine structure corresponding to different nitrogen nearest-neighbor environments was observed in contactless electroreflectance (CER) spectra of as-grown GaInNAs quantum wells (QWs) obtained at various As/III pressure ratios.
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Room temperature photoreflectance of different electron concentration GaN epitaxial layers
Robert Kudrawiec,Grzegorz Sęk,Jan Misiewicz,Regina Paszkiewicz,Bogdan Paszkiewicz,Marek Tłaczała +5 more
TL;DR: In this article, photoreflectance (PR) spectroscopy performed at room temperature was performed on GaN epilayers grown by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates.
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Quantum-dot light-emitting diode with ultrathin Au electrode embedded in solution-processed phosphomolybdic acid
TL;DR: In this article, the authors exploit phosphomolybdic acid (PMA) as a cost-efficient MoOx source for combined spincoating/sputtering/spin-coating deposition of a MoOx/Au/MoOx composite electrode.
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Green emission from barium–strontium titanate matrix introduced into nano-porous anodic alumina
Artur Podhorodecki,N. V. Gaponenko,Mateusz Banski,M. V. Rudenko,L. S. Khoroshko,A. Sieradzki,Jan Misiewicz +6 more
TL;DR: In this article, the optical and electrical properties of (Ba 0,6 Sr 0,3 Ca 0,1 )TiO 3 (BSCT) doped with Tb 3+ ions and deposited onto nano-porous anodic alumina using sol-gel method were discussed.
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Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
Grzegorz Cywiński,Robert Kudrawiec,Łukasz Janicki,Jan Misiewicz,Caroline Chèze,Marcin Siekacz,Marta Sawicka,P. Wolny,Michal Bockowski,Czeslaw Skierbiszewski +9 more
TL;DR: In this paper, two series of GaN van Hoof structures with different thicknesses of an undoped GaN cap layer were grown under metal-rich conditions by plasma-assisted molecular beam epitaxy and were then investigated by contactless electroreflectance (CER) to study the Fermi-level position of the (0001) GaN surface after growth as well as after chemical treatment using Piranha solution.