J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
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Journal ArticleDOI
Band Offsets and Photoluminescence Thermal Quenching in Mid-Infrared Emitting GaInAsSb Quantum Wells with Quinary AlGaInAsSb Barriers
Grzegorz Sęk,Marcin Motyka,Krzysztof Ryczko,F. Janiak,Jan Misiewicz,Sofiane Belahsene,Guilhem Boissier,Yves Rouillard +7 more
TL;DR: In this article, the chemical conduction band offset ratio has been determined to be 78%, which translates into 65% in the real structure after strain inclusion in a quinary barrier system in favor of enhanced confinement in the valence band when compared to similar quantum wells but with quaternary barriers.
Journal ArticleDOI
Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
W. Rudno-Rudziński,Marcin Syperek,J. Andrzejewski,A. Maryński,Jan Misiewicz,Andre Somers,Sven Höfling,Sven Höfling,Johann Peter Reithmaier,Grzegorz Sęk +9 more
TL;DR: In this paper, the authors investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm.
Journal ArticleDOI
Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells
Krzysztof Ryczko,Grzegorz Sęk,Marcin Motyka,F. Janiak,M. Kubisa,Jan Misiewicz,Sofiane Belahsene,Guilhem Boissier,Yves Rouillard +8 more
TL;DR: In this paper, the effect of post-growth-annealing-induced interdiffusion process, and hence interface intermixing, on the electronic structure of Ga0.35In0.65As0.24Sb0.68/Al0.76 single quantum well designed to emit light in the range of about 3 µm.
Journal ArticleDOI
Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells
R. Kudrawiec,Marta Gladysiewicz,Amélie Dussaigne,Henryk Teisseyre,M. Boćkowski,Izabella Grzegory,Tadeusz Suski,Jan Misiewicz,Nicolas Grandjean +8 more
TL;DR: In this paper, contactless electroreflectance (CER) has been applied to study optical transitions between ground and excited states in polar and a-plane nonpolar 2 nm wide GaN/Al 0.12Ga0.88N quantum well (QW) structures.