J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
Papers
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Journal ArticleDOI
Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method
Robert Kudrawiec,M. Rudziński,Marta Gladysiewicz,L. Janicki,P.R. Hageman,Wlodek Strupinski,Jan Misiewicz,Robert Kucharski,M. Zając,R. Doradziński,R. Dwiliński +10 more
TL;DR: In this article, it was shown that polarization effects in the AlGaN/GaN heterostructures on the c-plane lead to a strong built-in electric field in the alGaN layer.
Journal ArticleDOI
Advanced optical characterization of AlGaAs/GaAs superlattices for active regions in quantum cascade lasers
F. Janiak,M. Dyksik,Marcin Motyka,Krzysztof Ryczko,Jan Misiewicz,Kamil Kosiel,Maciej Bugajski +6 more
TL;DR: In this paper, the growth rate of GaAs/AlGaAs superlattices with layer composition imitating the active region of quantum cascade lasers emitting in the mid infrared spectral range were investigated.
Journal ArticleDOI
1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD
TL;DR: In this paper, a silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide (SRSO) matrix doped with Er 3+ ions for different erbium and silicon concentrations have been deposited by electron-cyclotron resonance plasmaenhanced chemical-vapor-deposition (ECR-PECVD) technique.
Journal ArticleDOI
Photoreflectance spectroscopy of coupled InxGa1−xAs/GaAs quantum wells
Grzegorz Sęk,Krzysztof Ryczko,M. Kubisa,Jan Misiewicz,Manfred Bayer,Tao Wang,Johannes Koeth,Alfred Forchel +7 more
TL;DR: In this paper, the authors investigated the optical transitions in strained In 0045 Ga 0955 As/GaAs multiple quantum wells, where the structures were grown by molecular beam epitaxy for different GaAs barrier thickness (1, 3, 5 and 9 monolayers) and for different numbers of wells (3 and 4).
Proceedings ArticleDOI
Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures
Grzegorz Sęk,P. Podemski,Robert Kudrawiec,Jan Misiewicz,Andre Somers,S. Hein,Sven Höfling,Johann Peter Reithmaier,Alfred Forchel +8 more
TL;DR: In this paper, the QW-QDash energy transfer has been probed by temperature dependent photoluminescence with changed excitation wavelength, where an efficient tunneling has been evidenced directly in the photoreflectance spectra up to 130 K.