J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
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Journal ArticleDOI
Dual-Junctions Field Effect Transistor Based on MoS2/Te/MoS2
TL;DR: In this article , a dual-junctions field effect transistor (DJFET) is proposed for next-generation electronic applications, where the MoS2 on top and bottom serves as dual-gate and the tellurium (Te) in middle is the carrier transport channel.
Room-Temperature Near-Infrared and Self-Powered Photodetectors Based on Graphite/WTe2/Ge Mixed van der Waals Heterostructure
Hengyi Li,Jia Huang,Peng Gao,Baoxiang Yang,Zhibin Lan,Wei Gao,Fen-Dui Zhang,Mengmeng Yang,Zhaoqiang Zheng,Nengjie Huo,Jingbo Li +10 more
TL;DR: In this article , a graphite (Gr)/WTe2/Ge mixed-dimensional van der Waals (vdWs) heterojunction-based Schottky photodetector (PD) was constructed for self-powered near-infrared detection.
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A Comparative Study Uncovering the Different Effect of Nb, Mo and W Dopants on Phase Transition of Vanadium Dioxide
Journal ArticleDOI
Bi2O2Se Nanowire/MoSe2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel.
Zecheng Chen,Jia Huang,Mengmeng Yang,Xiao Liu,Zhaoqiang Zheng,Nengjie Huo,Lixiang Han,Dongxiang Luo,Jingbo Li,Wei Gao +9 more
TL;DR: In this article , a 1D Bi2O2Se/MoSe2 photodiode was designed with type-II band alignment and achieved a high rectification ratio of 103.17 A/W and 100/110 μs under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes.
Journal ArticleDOI
Integration of Self‐Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices
Ziwen Huang,Zhongtong Luo,Ziwen Deng,Mengmeng Yang,Wei Gao,Jiandong Yao,Yu Zhao,Huafeng Dong,Zhaoqiang Zheng,Jingbo Li +9 more
TL;DR: In this article , defect-free van der Waals contacts have been achieved by utilizing topological Bi2Se3 as the electrodes, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes.