J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
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Exciton states and optical spectra in CdSe nanocrystallite quantum dots
TL;DR: In this paper, the effect of spin-orbital coupling on hole states and optical spectra in CdSe nanocrystallite quantum dots was investigated, and it was found that the strong spin-orbital coupling limit is a good approximation for hole states.
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Enhanced composites of V2O5 nanowires decorating on graphene layers as ideal cathode materials for lithium-ion batteries
TL;DR: In this article, the V2O5/Graphene composites were successfully designed and synthesized via a smart route, and they exhibited improved electrochemical performance compared with bare V 2O5 nanowires, and achieved a discharge capacity of 190.9 mAhg−g−1 in the third cycle and capacity retention of 96.6% after 150 cycles.
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Low temperature electrical transport and photoresponsive properties of H-doped MoO3 nanosheets
Juehan Yang,Fangyuan Lu,Yan Li,Shengxue Yang,Renxiong Li,Nengjie Huo,Chao Fan,Zhongming Wei,Zhongming Wei,Jingbo Li,Shu-Shen Li +10 more
TL;DR: In this paper, a water bath method using ammonium heptamolybdenum tetrahydrate and concentrated nitric acid as precursors was used to synthesize H-doped MoO3 nanosheets.
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The bipolar doping of ZnS via native defects and external dopants
TL;DR: In this article, a systematic study of the dopability of ZnS to be both n- and p-types compared with ZnO is carried out by employing first-principle total energy calculations.
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Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation
TL;DR: The intrinsic large electronegativity of O 2p character of the valence-band maximum (VBM) of ZnO renders it extremely difficult to be doped p type as mentioned in this paper.