J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
Papers
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Journal ArticleDOI
A ternary SnS1.26Se0.76 alloy for flexible broadband photodetectors
Lena Du,Lena Du,Cong Wang,Cong Wang,Cong Wang,Jingzhi Fang,Bin Wei,Wenqi Xiong,Xiaoting Wang,Lijun Ma,Lijun Ma,Xiaofeng Wang,Xiaofeng Wang,Zhongming Wei,Congxin Xia,Jingbo Li,Zhongchang Wang,Xinzheng Zhang,Qian Liu +18 more
TL;DR: In this paper, a ternary SnS1.26Se0.76 alloy nanosheet was used as an efficient flexible photodetector, possessing excellent mechanical durability, reproducibility, and high photosensitivity.
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Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors.
Yuan Pan,Qixiao Zhao,Feng Gao,Mingjin Dai,Wei Gao,Tao Zheng,Shichen Su,Jingbo Li,Hongyu Chen +8 more
TL;DR: In this article , a superior responsivity polarization-sensitive photodetector based on multilayer γ-InSe is constructed by a facile method, and the conductance and carrier mobility of the device along the armchair direction are 11.8 and 2.35 times larger than those along the zigzag direction, respectively.
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High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure.
Zhongtong Luo,Huakai Xu,Wei Gao,Mengmeng Yang,Yan He,Ziwen Huang,Jiandong Yao,Menglong Zhang,Huafeng Dong,Yu Zhao,Zhaoqiang Zheng,Jingbo Li +11 more
TL;DR: In this article , a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported, which demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2
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Thermodynamic analysis of Mg-doped p-type GaN semiconductor
Jingbo Li,Jingkui Liang,Guanghui Rao,Yi Zhang,Guang-Yao Liu,J. R. Chen,Quanlin Liu,Weijing Zhang +7 more
TL;DR: In this paper, a thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN.
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Phase composition of arc-melted alloys in the ternary systemCe–Al–Cu (Cu-poor portion)
Xiaotao Hu,Xiaotao Hu,H.Y. Zhou,Jingbo Li,Shunkang Pan,T. Wang,Qingrong Yao,L.B. Duan,Wang Yinxiao,X.J. Chen,G.H. Rao +10 more
TL;DR: The phase composition of arc-melted alloys in the ternary system Ce-Al-Cu (Cu-poor portion) in the as-cast state were investigated by X-ray powder diffraction (XRD), differential thermal analysis (DTA) and scanning electron microscopy (SEM) techniques as mentioned in this paper.