J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
Papers
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Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions
Xiaoting Wang,Le Huang,Yuting Peng,Nengjie Huo,Kedi Wu,Congxin Xia,Zhongming Wei,Sefaattin Tongay,Jingbo Li +8 more
TL;DR: In this paper, the authors fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties.
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Ferroelectric transition of Aurivillius compounds Bi5Ti3FeO15 and Bi6Ti3Fe2O18
TL;DR: In this paper, single-phase Bi5Ti3FeO15 and Bi6Ti3 Fe2O18 ceramics have been synthesized by solid state reaction and the ferroelectric transition of the compounds was studied by differential scanning calorimetry, high-temperature x-ray diffraction, and temperature-dependent dielectric measurements.
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Possible origin of ferromagnetism in undoped anatase TiO2
TL;DR: In this paper, the authors used first-principles electronic structure calculations to find that the titanium vacancy and divacancy may be responsible for the unexpected ferromagnetism in undoped anatase TiO2.
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Platinum/Mesoporous WO3 as a Carbon-Free Electrocatalyst with Enhanced Electrochemical Activity for Methanol Oxidation
TL;DR: The overall electro-catalytic activities of 20 wt % Pt/WO3 composites are significantly higher than that of commercial 20 wts% Pt/C catalyst and are comparable to the 20 wT % PtRu/C Catalyst in the potential region of 0.5-0.7 V.
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Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance
Congxin Xia,Juan Du,Xiaowei Huang,Wenbo Xiao,Wenqi Xiong,Tianxing Wang,Zhongming Wei,Yu Jia,Jun-jie Shi,Jingbo Li +9 more
TL;DR: In this article, the authors show that 2D van der Waals (vdW) heterojunctions with typical type-II band alignment are the direct-band-gap semiconductor with high optical absorption strength, broad spectrum width, and excellent carrier mobility.