J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
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PtSe2/graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type.
TL;DR: The work demonstrates that the graphene stacking configuration and gate-voltage will tune the electronic characteristics of PtSe2/graphene-based nanodevices.
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Interface-controlled band alignment transition and optical properties of Janus MoSSe/GaN vdW heterobilayers
TL;DR: In this paper, the authors constructed theoretically two-dimensional (2D) Janus MoSSe/GaN van der Waals (vdW) heterobilayers, and demonstrate that it has direct band structures and broad optical absorption spectrum from visible to ultraviolet region.
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Intrinsic defects in gallium sulfide monolayer: a first-principles study
TL;DR: In this article, the electronic and magnetic properties of point defects, including vacancies (VGa and VS), antisites (GaS and SGa) and interstitials (Gai and Si) in monolayer and bulk GaS, were systemically studied using the density functional theory method.
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Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics
TL;DR: In this article, the electrical properties of MoS 2 nanosheet field effect transistor (NSFET) under air and NH 3 environments are studied both by experiment measurements and theoretical calculations, and the experimental results illustrate that the performance of NSFET is distinctly altered under NH 3 environment.
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Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study.
TL;DR: The simulation results reveal that a rich variety of defect structures are formed with threshold energies from 11 to 64 eV, which suggests that the electron irradiation may be a way to use defect engineering to tailor electronic properties of SiC nanotubes.