J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
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Origin of antiferromagnetism in CoO: A density functional theory study
TL;DR: In this paper, the origin of antiferromagnetic magnetism of CoO in the rocksalt structure using spin-polarized density functional theory calculations was investigated, and it was shown that the interaction between the occupied and unoccupied eg states plays the dominant role.
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Direct Wide Bandgap 2D GeSe2 Monolayer toward Anisotropic UV Photodetection
Yong Yan,Wenqi Xiong,Shasha Li,Kai Zhao,Xiaoting Wang,Jian Su,Xiaohui Song,Xueping Li,Shuai Zhang,Huai Yang,Xinfeng Liu,Lang Jiang,Tianyou Zhai,Congxin Xia,Jingbo Li,Zhongming Wei +15 more
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Large scale ZrS2 atomically thin layers
TL;DR: In this paper, a scalable synthesis of large scale (up to 30 μm in lateral size), single-crystalline, atomically thin hexagonal ZrS2 nanoflakes via an optimized chemical vapor deposition (CVD) method on traditional substrates (silica, sapphire).
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2D In 2 S 3 Nanoflake Coupled with Graphene toward High-Sensitivity and Fast-Response Bulk-Silicon Schottky Photodetector.
Jianting Lu,Zhaoqiang Zheng,Zhaoqiang Zheng,Jiandong Yao,Wei Gao,Yu Zhao,Ye Xiao,Jingbo Li,Jingbo Li +8 more
TL;DR: The introduction of the double-heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain.
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Tin dioxide quantum dots coupled with graphene for high-performance bulk-silicon Schottky photodetector
Zhaoqiang Zheng,Jiandong Yao,Lianfeng Zhu,Wei Jiang,Bing Wang,Guowei Yang,Jingbo Li,Jingbo Li +7 more
TL;DR: In this paper, the authors demonstrate that tin dioxide quantum dots (SnO2-QDs) coupled with graphene produce a Schottky junction with B-Si to drastically promote the performance of the SnO2QDs/graphene/B-Si photodetector, which is sensitive to broadband illumination covering the UV-vis-NIR region.