J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
Papers
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Mechanical and electronic properties of monolayer MoS2 under elastic strain
TL;DR: In this article, the elastic constants and electronic structures of two-dimensional monolayer MoS 2 under elastic strain using the first-principles calculations were analyzed and the in-plane stiffness and Poisson ratio calculated in the harmonic elastic strain range were found to be 123 N/m and 0.25, indicating that monollayer MoS2 is much softer than graphene.
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Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures.
TL;DR: It is found that the interlayer van der Waals interaction is not strong enough to form a lattice-matched coherent heterostructure, and a nanometer-scale Moiré pattern structure will be formed, which can have major impacts on the carrier mobility and other electronic and optical properties.
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A two-dimensional Fe-doped SnS2 magnetic semiconductor.
TL;DR: The authors fabricate Fe-doped SnS2 monolayers and show that Fe0.021Sn0.979S2 exhibits ferromagnetic behaviour with perpendicular anisotropy at 2 K, and a Curie temperature of 31’K.
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Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
TL;DR: In this article, the structural, electronic and magnetic properties of monolayer MoS2 doped with nonmetal and transition-metal atoms are investigated using first-principles calculations.
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Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field
Yan Li,Shengxue Yang,Jingbo Li +2 more
TL;DR: In this article, the structural and electronic properties of the bulk and ultrathin black phosphorus and the effects of in-plane strain and out-of-plane electrical field on the electronic structure of phosphorene were investigated using first-principles methods.