J
Jingbo Li
Researcher at Beijing Institute of Technology
Publications - 465
Citations - 22526
Jingbo Li is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Band gap & Heterojunction. The author has an hindex of 61, co-authored 403 publications receiving 17623 citations. Previous affiliations of Jingbo Li include Centre national de la recherche scientifique & University of Science and Technology Beijing.
Papers
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Journal ArticleDOI
Neutron diffraction study on composite compound Nd 2 Co 7
Yu-Qi Yang,Guan-Nan Li,Guan-Nan Li,Tong Wang,Qingzhen Huang,Qing-Qing Gao,Jingbo Li,Guang-Yao Liu,Jun Luo,Guanghui Rao +9 more
TL;DR: In this paper, the magnetic properties of the composite compound Nd2Co7 at 300 K were investigated by a combined refinement of X-ray diffraction data and high-resolution neutrasonic data.
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A comparative study on characteristic relaxation in Ce65Al10Cu20Co5 and Zr46.75Ti8.25Cu7.5Ni10Be27.5 bulk metallic glasses and supercooled liquids
TL;DR: In this paper, the authors investigated the relaxation behaviors of Zr46 75Ti8.25Cu75Ni10Be275 (Vit4) and Zr65Al10Cu20Co5 (CiC10C20C5) bulk glass-forming supercooled liquids.
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Subsolidus Phase Relations of the BaO–Y2O3–MnO2 System in Air
Changlei Wang,Changlei Wang,Jingbo Li,Jingbo Li,Qing-Qing Gao,Guan-Nan Li,Guang-Yao Liu,Guanghui Rao,Jun Luo,Zhenmin Du,Jingkui Liang +10 more
TL;DR: The subsolidus phase relations of the BaO-Y2O3-MnO2 system have been investigated in air as mentioned in this paper, where eight binary compounds, a new ternary compound and 11 three-phase regions in this system were determined to be stoichiometric.
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Reconfigurable and Broadband Polarimetric Photodetector
TL;DR: In this article, a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate-tunability on both photo gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarization-resolved photodetection and imaging applications.
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Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging.
Baoxiang Yang,Wei Gao,Heng. Li,Peng Gao,Mengmeng Yang,Yuan Pan,Chuanglei Wang,Yani Yang,Nengjie Huo,Zhaoqiang Zheng,Jingbo Li +10 more
TL;DR: In this article , a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH) was proposed to suppress the dark current and accelerate the separation of photogenerated carriers.