K.N. Bhat

TL;DR: In this article, the breakdown voltage of planar junctions equipped with field plates and guard rings is determined by evaluating the ionization integral using the potential distribution computed by solving Poisson's equation in two-dimensions by a finite difference method.

TL;DR: In this paper, the authors proposed a model that considers single-crystal silicon grain in equilibrium with amorphous silicon grain boundary to obtain near zero temperature coefficient of resistivity.

TL;DR: In this article, a charge sheet analytic model is presented for the channel currents of long-channel SOI MOSFETs, and the results include analytic expressions for the drift and diffusion current components of individual channel currents, the front-gate and back-gate interaction parameter, and an analytic correlation between the surface potentials of the front and back channels when there is coupling between the two gates under nonthermal equilibrium conditions.

TL;DR: In this article, the phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors, and the results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorous diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6Pascal), and burst pressure of 50 Bar as compared to the 10mV/Bar sensitivity obtained with Boron doped poly

TL;DR: In this paper, the effects of the injection of holes into the collector and the back injection of the electrons from the collector into the base of a high-voltage power transistor operating in the quasi-saturation region are analyzed taking into account the effect of injection of hole injection and back injection.