N
Nandita DasGupta
Researcher at Indian Institute of Technology Madras
Publications - 111
Citations - 2128
Nandita DasGupta is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: High-electron-mobility transistor & Gate dielectric. The author has an hindex of 22, co-authored 111 publications receiving 1830 citations. Previous affiliations of Nandita DasGupta include Indian Institutes of Technology & Indian Institute of Technology Kharagpur.
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The 2016 oxide electronic materials and oxide interfaces roadmap
Michael Lorenz,M. S. Ramachandra Rao,Thirumalai Venkatesan,Elvira Fortunato,Pedro Barquinha,Rita Branquinho,Daniela Salgueiro,Rodrigo Martins,Emanuel Carlos,Ao Liu,Fukai Shan,Marius Grundmann,Hans Boschker,Joynarayan Mukherjee,M. Priyadarshini,Nandita DasGupta,D. J. Rogers,Ferechteh H. Teherani,E. V. Sandana,Philippe Bove,Kevin J. Rietwyk,Arie Zaban,A. Veziridis,Anke Weidenkaff,Miryala Muralidhar,Masato Murakami,Stefan Abel,Jean Fompeyrine,Jesús Zúñiga-Pérez,Ramamoorthy Ramesh,Nicola A. Spaldin,S. Ostanin,Vitaliy B. Borisov,Ingrid Mertig,Vera Lazenka,Gopalan Srinivasan,Wilfrid Prellier,Masaki Uchida,Masashi Kawasaki,Rossitza Pentcheva,Philipp Gegenwart,F. Miletto Granozio,Josep Fontcuberta,Nini Pryds +43 more
TL;DR: In this paper, the authors present a roadmap for oxide-based electronics with a focus on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices.
Journal ArticleDOI
A micro-convection model for thermal conductivity of nanofluids
Hrishikesh E. Patel,Thirumalachari Sundararajan,Thalappil Pradeep,Amitava DasGupta,Nandita DasGupta,Sarit K. Das +5 more
TL;DR: A semi-empirical approach for the same by emphasizing the above two effects through micro-convection is presented in this article. But it is not suitable for the case of high temperature.
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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
Sreenidhi Turuvekere,Naveen Karumuri,A. Azizur Rahman,Arnab Bhattacharya,Amitava DasGupta,Nandita DasGupta +5 more
TL;DR: In this article, the gate leakage mechanisms in AlInN/GaN and AlGaN/GAN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate currentvoltage (IG-VG) characteristics.
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Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation
TL;DR: In this paper, the potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field effect transistors with doped and undoped channels.
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Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs
TL;DR: In this article, analytical models of sub-threshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented, and the results of the models show excellent match with simulations using MEDICI.