Journal ArticleDOI
Numerical and charge sheet models for thin-film SOI MOSFETs
C. Mallikarjun,K.N. Bhat +1 more
TLDR
In this article, a charge sheet analytic model is presented for the channel currents of long-channel SOI MOSFETs, and the results include analytic expressions for the drift and diffusion current components of individual channel currents, the front-gate and back-gate interaction parameter, and an analytic correlation between the surface potentials of the front and back channels when there is coupling between the two gates under nonthermal equilibrium conditions.Abstract:
Numerical charge sheet models applicable for all bias conditions are presented for the channel currents of long-channel SOI MOSFETs. From a comparison of the two models it is shown that the charge sheet analytic model accurately predicts the channel currents from weak to strong inversion regions. The results include analytic expressions for the drift and diffusion current components of individual channel currents, the front-gate and back-gate interaction parameter, and an analytic correlation between the surface potentials of the front and back channels when there is coupling between the two gates under nonthermal equilibrium conditions. The effect of SOI (silicon on insulator) film thickness on the drain current was investigated under different bias conditions for the back gate, and it was found that thin films are beneficial from the point of increased drain currents if the back channel is in depletion or inversion. It is also shown that, in addition to the charge coupling effects, dynamic interaction between the channels exists if the static current in one of the channels saturates. >read more
Citations
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Book
Mosfet Modeling for Circuit Analysis and Design
TL;DR: The first book dedicated to the next generation of MOSFET models is as mentioned in this paper, addressed to circuit designers with an in-depth treatment that appeals to device specialists, presenting a fresh view of compact modeling, having completely abandoned the regional modeling approach.
Journal ArticleDOI
Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
TL;DR: In this paper, a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs) is presented.
Journal ArticleDOI
Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs
TL;DR: In this paper, analytical expressions are presented to model the behavior of the potential at the surface and the difference of potentials at the center of the doped silicon layer as function of silicon layer impurity concentration, gate dielectric thickness, silicon layer thickness and applied voltages in double-gate MOSFETs.
Journal ArticleDOI
A physically-based C/sub /spl infin//-continuous fully-depleted SOI MOSFET model for analog applications
TL;DR: In this article, an explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented under quasistatic operation conditions analytical and C/sub /spl infin//-continuous equations are derived for all transistor large and small-signal parameters.
Journal ArticleDOI
RF and noise performance of double gate and single gate SOI
TL;DR: In this paper, a new model is presented for DG SOI and single-gate SOI DC, RF and noise modelling, which is based on the active line approach and the concept of linear noise theory of two ports for calculating the macroscopic noise sources.
References
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Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Journal ArticleDOI
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this article, the charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI) MOSFETs is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived.
Journal ArticleDOI
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆
H.C. Pao,Chih-Tang Sah +1 more
TL;DR: In this article, the effects of the diffusion current on the three more important low-frequency dynamic characteristics (the short-circuit gate capacitance, the transconductance, and the drain conductance) are discussed.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.