High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Eric R. Heller,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +8 more
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In this paper, the authors report on Sn-doped β-Ga2O3 MOSFETs with as-grown carrier concentrations from 0.7 to 1.6 and a fixed channel thickness of 200 nm.Abstract:
We report on Sn-doped β-Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed channel thickness of 200 nm. A pulsed current density of >450 mA/mm was achieved on the sample with the lowest sheet resistance and a gate length of 2 μm. Our results are explained using a simple analytical model with a measured gate voltage correction factor based on interface charges that accurately predict the electrical performance for all doping variations.read more
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
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Guest Editorial: The dawn of gallium oxide microelectronics
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Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
TL;DR: In this article, the performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors on Ga2O3 has been evaluated and shown to benefit from the larger critical electric field relative to either SiC or GaN.
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Review of gallium-oxide-based solar-blind ultraviolet photodetectors
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
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β-Ga2O3 for wide-bandgap electronics and optoelectronics
TL;DR: In this paper, a review of β-Ga2O3 at the research level that spans from the material preparation through characterization to final devices is presented, including material preparation (bulk crystals, epi-layers, surfaces), an exploration of optical, electrical, thermal and mechanical properties, as well as device design / fabrication with resulted functionality suitable for different fields of applications.
References
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The work function of the elements and its periodicity
TL;DR: In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data.
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
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Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
TL;DR: In this paper, the successful growth of 2-in. β-Ga2O3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated, and the optimization of growth conditions for larger single crystalline β-GA 2O3 is discussed in detail.
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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki,Kohei Sasaki,Takafumi Kamimura,Man Hoi Wong,Daivasigamani Krishnamurthy,Akito Kuramata,Takekazu Masui,S. Yamakoshi +7 more
TL;DR: In this article, single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field effect transistors were fabricated on a semi-insulating β-Ga 2O3 (010) substrate.
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First-principles study of the structural, electronic, and optical properties of Ga 2 O 3 in its monoclinic and hexagonal phases
Haiying He,Roberto Orlando,M. A. Blanco,Ravindra Pandey,Emilie Amzallag,Isabelle Baraille,Michel Rérat +6 more
TL;DR: In this paper, the structural, electronic, and optical properties of Ga2O3 in its ambient, monoclinic and high-pressure, hexagonal phases in the framework of all-electron density functional theory were investigated.