M
Mahesh G. Samant
Researcher at IBM
Publications - 190
Citations - 14609
Mahesh G. Samant is an academic researcher from IBM. The author has contributed to research in topics: Thin film & Absorption spectroscopy. The author has an hindex of 52, co-authored 187 publications receiving 13499 citations. Previous affiliations of Mahesh G. Samant include Samsung.
Papers
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Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
Stuart S. P. Parkin,Kevin P. Roche,Mahesh G. Samant,P. M. Rice,Robert Beyers,Roy Edwin Scheuerlein,Eugene J. O'Sullivan,Stephen L. Brown,J. Bucchigano,D. W. Abraham,Yu Lu,M. Rooks,Philip L. Trouilloud,R. A. Wanner,William J. Gallagher +14 more
TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.
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Suppression of Metal-Insulator Transition in VO2 by Electric Field–Induced Oxygen Vacancy Formation
Jaewoo Jeong,Nagaphani Aetukuri,Nagaphani Aetukuri,Tanja Graf,Thomas D. Schladt,Mahesh G. Samant,Stuart S. P. Parkin +6 more
TL;DR: It is found that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 kelvin, even after the ionic liquid is completely removed.
Journal ArticleDOI
Magnetically engineered spintronic sensors and memory
Stuart S. P. Parkin,Xin Jiang,Christian Kaiser,Alex Panchula,Kevin P. Roche,Mahesh G. Samant +5 more
TL;DR: The magnetic tunnel junction (MTJ) as discussed by the authors is an example of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems.
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Element-Specific Magnetic Microscopy with Circularly Polarized X-rays
Joachim Stöhr,Yanqing Wu,B. D. Hermsmeier,Mahesh G. Samant,G. R. Harp,S. Koranda,D. Dunham,Brian P. Tonner +7 more
TL;DR: In this article, the authors used circularly polarized soft x-rays with an imaging photoelectron microscope to record images of magnetic domains at a spatial resolution of 1 micrometer.