M
Minjoo L. Lee
Researcher at Massachusetts Institute of Technology
Publications - 57
Citations - 2715
Minjoo L. Lee is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Electron mobility & Strained silicon. The author has an hindex of 21, co-authored 49 publications receiving 2638 citations.
Papers
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Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
Journal ArticleDOI
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Minjoo L. Lee,Christopher W. Leitz,Z. Y. Cheng,Arthur J. Pitera,Thomas A. Langdo,Matthew T. Currie,Gianni Taraschi,Eugene A. Fitzgerald,Dimitri A. Antoniadis +8 more
TL;DR: In this article, a strained Ge channel p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated on Si0.3Ge0.7 virtual substrates.
Journal ArticleDOI
Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates
Christopher W. Leitz,Matthew T. Currie,Minjoo L. Lee,Z. Y. Cheng,D.A. Antoniadis,Eugene A. Fitzgerald +5 more
TL;DR: In this article, the authors achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates.
Journal ArticleDOI
Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors
Christopher W. Leitz,Matthew T. Currie,Minjoo L. Lee,Z. Y. Cheng,Dimitri A. Antoniadis,Eugene A. Fitzgerald +5 more
TL;DR: In this paper, the authors investigated the dependence of hole mobility in strained Si MOSFETs on substrate Ge content, strained layer thickness, and channel composition, and showed that hole mobility enhancements saturate at virtual substrate compositions of 40% Ge and above, with peak mobility enhancements over twice that of coprocessed bulk Si devices.
Journal ArticleDOI
Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition
TL;DR: In this paper, the growth of tensile-strained Ge on relaxed InxGa1−xAs epitaxial templates by metal-organic chemical vapor deposition was investigated.