Minjoo L. Lee

TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.

TL;DR: In this article, a strained Ge channel p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated on Si0.3Ge0.7 virtual substrates.

TL;DR: In this article, the authors achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates.

TL;DR: In this paper, the authors investigated the dependence of hole mobility in strained Si MOSFETs on substrate Ge content, strained layer thickness, and channel composition, and showed that hole mobility enhancements saturate at virtual substrate compositions of 40% Ge and above, with peak mobility enhancements over twice that of coprocessed bulk Si devices.

TL;DR: In this paper, the growth of tensile-strained Ge on relaxed InxGa1−xAs epitaxial templates by metal-organic chemical vapor deposition was investigated.