N
N.P. van der Meijs
Researcher at Delft University of Technology
Publications - 45
Citations - 1095
N.P. van der Meijs is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Circuit extraction & Integrated circuit. The author has an hindex of 15, co-authored 45 publications receiving 1038 citations.
Papers
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Journal ArticleDOI
A 26 $\mu$ W 8 bit 10 MS/s Asynchronous SAR ADC for Low Energy Radios
Pieter Harpe,Cui Zhou,Yu Bi,N.P. van der Meijs,Xiaoyan Wang,Kathleen Philips,Guido Dolmans,H. de Groot +7 more
TL;DR: The fully dynamic design, which is optimized for low-leakage, leads to a standby power consumption of 6 nW and the energy efficiency of this converter can be maintained down to very low sampling rates.
Journal ArticleDOI
VLSI circuit reconstruction from mask topology
N.P. van der Meijs,J.T. Fokkema +1 more
TL;DR: Attention is paid to fabrication tolerances, wire capacitance, wire resistance, coupling capacitances and capacitance associated with contacts and the aspect ratio of (non-rectangular) transistors.
Proceedings ArticleDOI
Extraction of circuit models for substrate cross-talk
TL;DR: A boundary element method (BEM) for calculating an admittance matrix for the substrate in order to analyze the parasitic coupling during layout verification and a Green's function which is specific to the domain and the problem is proposed.
Proceedings ArticleDOI
Fast computation of substrate resistances in large circuits
TL;DR: A method to quickly and accurately estimate substrate coupling effects in analog and mixed digital/analog integrated circuits and has been implemented in the layout-to-circuit extractor Space.
Proceedings ArticleDOI
Combined BEM/FEM substrate resistance modeling
E. Schrik,N.P. van der Meijs +1 more
TL;DR: A way to incorporate doping patterns into the substrate model by combining a BEM for the stratified doping profiles with a 2D FEM forThe top-level, layout-dependent doping patterns, thereby achieving improved flexibility compared to BEM and improved speed compared to FEM is described.