Nicolas Grandjean

TL;DR: In this paper, the experimental determination of excitonic dephasing times at different temperatures and exciton densities in III-nitride heterostructures was made by applying four-wave mixing spectroscopy to a high-quality GaN/AlGaN single quantum well.

TL;DR: In this paper, the authors optimized the ohmic contact processing in InAlN/GaN high electron mobility transistors for the lower temperature of annealing by recessing of metalliza-tion to approach the 2DEG at the interface.

TL;DR: In this paper, a hybrid laser diodes with n-type layers and an active region grown by metal organic vapor phase epitaxy (MOPE) with p-type layer grown by molecular beam epitaxy are presented.

TL;DR: In this paper, the authors studied the time-resolved photoluminescence (PL) properties in the low injection regime and at cryogenic temperatures of c-plane GaN/AlN QD ensembles emitting above the bulk GaN bandgap.

TL;DR: In this paper, an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells was studied, and the authors observed a good robustness of the lower polariton population peak energy position against temperature changes due to a balance between the shift of the exciton energy and the change in the normal mode splitting, a promising feature for future applications such as lasers and amplifiers where a small temperature drift in the emission wavelength is a desired asset.