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Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
Papers
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Journal ArticleDOI
Optical detection of 2DEG in GaN/AlGaN structures: High magnetic field studies
B. Chwalis,Andrzej Wysmołek,Roman Stepniewski,Marek Potemski,Wojciech Knap,Jacek M. Baranowski,Nicolas Grandjean,Jean Massies,Pawel Prystawko,Izabella Grzegory +9 more
TL;DR: Magneto-photoluminescence (PL) spectra in the energy range below the excitonic bulk transitions show periodic energy and line width oscillations what is interpreted as a fingerprint of two dimensional electron gas confined at GaN/AlGaN interface as discussed by the authors.
Journal ArticleDOI
Optical-pumping in strained in0.2ga0.8as/gaas quantum-wells
TL;DR: In this paper, the spin orientation by optical pumping experiments were undertaken on three strained In0.2Ga0.8As/GaAs QW's with different thicknesses and the results concerning the circular degree of polarization dependence on the exciting energy are very different from well to well.
Proceedings ArticleDOI
Triggering of guiding and antiguiding effects in GaN-based VCSELs
Ehsan Hashemi,Jörgen Bengtsson,Johan S. Gustavsson,Martin Stattin,Marlene Glauser,Gatien Cosendey,Nicolas Grandjean,Marco Calciati,Michele Goano,Åsa Haglund +9 more
TL;DR: In this article, the authors show that very small changes in the VCSEL structure are sufficient to strongly change the guiding character of the cavity, and that thermal lensing caused by device self-heating under operation can dramatically reduce the optical loss but not the modal discrimination in the antiguided cavity.
Patent
Light emitting device with transparent conductive group-iii nitride layer
TL;DR: In this paper, a light emitting device such as an LED or a laser is defined as a semiconductor structure operable to emit light and comprising a first layer and a second layer, and a transparent layer of a nitride of one or more group-III elements.
Proceedings ArticleDOI
Probing alloy formation using different excitonic species: The particular case of InGaN
TL;DR: In this paper, the photoluminescence (PL) spectra of the investigated bulk In(x)Ga(1-x)N epilayers were used as a tool to study the distribution of isoelectronic centers.