N
Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
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Journal ArticleDOI
Investigation of InGaN/GaN quantum wells for polariton laser diodes
Marlene Glauser,Georg Rossbach,Gatien Cosendey,Jacques Levrat,Munise Cobet,J.-F. Carlin,Jean Besbas,Mathieu Gallart,Pierre Gilliot,Raphaël Butté,Nicolas Grandjean +10 more
TL;DR: In this paper, the authors investigated the properties of low-in-content InGaN/GaN multiple quantum wells (MQWs) in terms of inhomogeneous broadening, exciton localization energy, and plastic strain relaxation.
Proceedings ArticleDOI
AlInN/GaN a suitable HEMT device for extremely high power high frequency applications
Christophe Gaquiere,Farid Medjdoub,J.-F. Carlin,S. Vandenbrouck,E. Delos,Eric Feltin,Nicolas Grandjean,Erhard Kohn +7 more
TL;DR: In this article, the authors achieved 1.5 W/mm output power density at low bias condition (VDS = 15V) in agreement with the expected power in spite of a strong thermal effect due to the sapphire substrate, a large leakage current in the Schottky diode characteristic and a low buffer layer resistivity.
Proceedings ArticleDOI
Growth of intersubband GaN/AlGaN heterostructures
Amélie Dussaigne,Sylvain Nicolay,Denis Martin,A. Castiglia,Nicolas Grandjean,Laurent Nevou,H. Machhadani,Maria Tchernycheva,Laurent Vivien,F. H. Julien,T. Remmele,Martin Albrecht +11 more
TL;DR: In this article, the use of both AlN template and optimized growth temperature allows to reach ISB transition energy in the telecom range, i.e. above 0.8 eV (lambda = 1.55 mu m).
Journal ArticleDOI
How to induce the epitaxial growth of gallium nitride on Si(001)
U. Rössner,A. Barski,Jean-Luc Rouvière,A. Bourret,Jean Massies,Christiane Deparis,Nicolas Grandjean +6 more
TL;DR: In this paper, a combined application of in-situ reflection high-energy electron diffraction, X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, the state of the Si(001) surface, the structure of GaN grown on this surface and the orientation relationship between substrate and layer were determined.
Journal ArticleDOI
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
Pierre Corfdir,Pierre Corfdir,Amélie Dussaigne,Henryk Teisseyre,Tadeusz Suski,Izabella Grzegory,Pierre Lefebvre,E. Giraud,Mehran Shahmohammadi,Richard T. Phillips,Jean-Daniel Ganière,Nicolas Grandjean,Benoit Deveaud +12 more
TL;DR: In this article, the dynamics of excitons in a plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates are presented.