N
Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
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Delayed relaxation by surfactant action in highly strained iii-v semiconductor epitaxial layers
TL;DR: It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors through delayed plastic relaxation of the strain and the modification of the growth mode via surface energy minimization.
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Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
TL;DR: In this paper, the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN∕GaN distributed Bragg reflectors (DBRs) was reported.
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Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Richard Bardoux,Thierry Guillet,Thierry Taliercio,Bernard Gil,Nicolas Grandjean,Fabrice Semond,Benjamin Damilano,Amélie Dussaigne,Jean Massies +11 more
TL;DR: In this paper, the transition energy and the radiative lifetime of Wurtzite GaN/AlN quantum dots (QDs) are studied by time-resolved photoluminescence.
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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
Jan Kuzmik,G. Pozzovivo,Clemens Ostermaier,Gottfried Strasser,Dionyz Pogany,Erich Gornik,J.-F. Carlin,M. Gonschorek,Eric Feltin,Nicolas Grandjean +9 more
TL;DR: In this article, degradation of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs) was analyzed by measuring the drain current, a threshold voltage, a Schottky contact barrier height, a gate leakage and an ideality factor, an access, and an intrinsic channel resistance.
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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
TL;DR: In this article, the insertion of an InGaN underlayer (UL) is known to strongly improve the performance of LED based blue light emitting diodes (LEDs), however, the actual physical mechanism responsible for it is still unclear.