N
Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
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Journal ArticleDOI
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser
Jeremy J. Baumberg,Alexey Kavokin,Stavros Christopoulos,A. J. D. Grundy,Raphaël Butté,Gabriel Christmann,Dmitry Solnyshkov,Guillaume Malpuech,G. Baldassarri Höger von Högersthal,Eric Feltin,J.-F. Carlin,Nicolas Grandjean +11 more
TL;DR: The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarization remains zero, which is completely different from any previous laser.
Journal ArticleDOI
Barrier-width dependence of group-III nitrides quantum-well transition energies
TL;DR: In this article, a low-temperature photoluminescence study showed that the behavior of transition energy versus the barrier width is the opposite of that currently obtained for more usual III-V semiconductor compounds like arsenides: when decreasing the barrier thickness, a blueshift is observed.
Proceedings ArticleDOI
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Farid Medjdoub,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Damien Ducatteau,Christophe Gaquiere,Nicolas Grandjean,Erhard Kohn +8 more
TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.
Journal ArticleDOI
Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)
M. Gonschorek,J.-F. Carlin,Eric Feltin,M. A. Py,Nicolas Grandjean,Vanya Darakchieva,Bo Monemar,Michael Lorenz,G. Ramm +8 more
TL;DR: In this paper, the effect of strain on the polarization induced sheet charge density at the Al1-x Inx N/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick interlayer.
Journal ArticleDOI
Progresses in III‐Nitride Distributed Bragg Reflectors and Microcavities Using AlInN/GaN Materials
Jean-François Carlin,Christoph Zellweger,J. Dorsaz,Sylvain Nicolay,Gabriel Christmann,Eric Feltin,Raphaël Butté,Nicolas Grandjean +7 more
TL;DR: In this paper, the lattice-matched AlInN/GaN was used to replace the Al(Ga)N/GAN material system for III-nitride Bragg reflectors, despite the poor material quality reported until very recently.