N
Nicolas Grandjean
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 626
Citations - 18787
Nicolas Grandjean is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 66, co-authored 617 publications receiving 17447 citations. Previous affiliations of Nicolas Grandjean include École Normale Supérieure & University of California, Santa Barbara.
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Journal ArticleDOI
Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
A Morel,Pierre Lefebvre,Thierry Taliercio,Thierry Bretagnon,Bernard Gil,Nicolas Grandjean,Benjamin Damilano,Jean Massies +7 more
TL;DR: In this paper, the radiative recombination processes in InGaN/GaN quantum wells were qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor-acceptor pairs".
Journal ArticleDOI
LED light sources (light for the future)
TL;DR: A series of topical papers discuss in detail various aspects of the physics and technology of white LEDs Carrier localization in InGaN quantum wells has been considered the key to white LEDs' success despite the huge density of defects.
Journal ArticleDOI
Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN.
Pierre Corfdir,Amélie Dussaigne,Henryk Teisseyre,Tadeusz Suski,Izabella Grzegory,Pierre Lefebvre,E. Giraud,Jean-Daniel Ganière,Nicolas Grandjean,Benoit Deveaud-Plédran +9 more
TL;DR: In this paper, the authors investigated the temperature dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals.
Journal ArticleDOI
Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy
Mathieu Leroux,Bernard Beaumont,Nicolas Grandjean,C. Golivet,Pierre Gibart,Jean Massies,Joël Leymarie,A M Vasson,A.-M. Vasson +8 more
TL;DR: In this article, the near edge photoluminescence and reflectivity of GaN layers grown on sapphire using three different methods are discussed and the importance of strain effects on intrinsic properties, as obtained from reflectivity, should be taken into account in the interpretation of luminescence spectra.
Proceedings ArticleDOI
InAlN/GaN heterostructures for microwave power and beyond
Erhard Kohn,Mohammed Alomari,A. Denisenko,Michele Dipalo,D. Maier,Farid Medjdoub,C. Pietzka,Sylvain Delage,M. A. Di-Forte Poisson,Erwan Morvan,N. Sarazin,J.C. Jacquet,Christian Dua,J.-F. Carlin,Nicolas Grandjean,M. A. Py,M. Gonschorek,Jan Kuzmik,Dionyz Pogany,G. Pozzovivo,Clemens Ostermaier,Lajos Tóth,Béla Pécz,J.C. De Jaeger,Christophe Gaquiere,K. Cico,Karol Fröhlich,Alexandros Georgakilas,Eleftherios Iliopoulos,George Konstantinidis,C. Giessen,Michael Heuken,B. Schineller +32 more
TL;DR: InAlN/GaN as mentioned in this paper is an alternative to the common AlGaN/GAN heterostructure in electronics and sensing, which enables operation at extremely high temperature once problems with contact metallization and passivation have been solved.