Nicolas Grandjean

TL;DR: In this paper, a III-nitride based blue vertical cavity surface emitting laser using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates.

TL;DR: In this paper, the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia were reported. But the growth procedure is very efficient in order to overcome the difficulties encountered during the growth of nitrides on silicon substrates: first, no nitridation of the silicon substrate is observed at the interface between the AIN buffer laver and the silicon surface.

TL;DR: In this article, the authors reported 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs.

TL;DR: In this article, the photoluminescence decay time of excitons is used as a probe of internal electric fields in GaN-(Ga, Al)N quantum wells in various configurations of strain, well widths, and barrier widths.

TL;DR: In this article, a systematic analysis of the composition measurement of III-N binary (AlN, GaN) and ternary compounds (InGaN, InAlN), MgO, and ZnO) by laser-assisted tomographic atom probe as a function of laser power and applied DC bias is presented.