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Nika Akopian
Researcher at Technical University of Denmark
Publications - 65
Citations - 2981
Nika Akopian is an academic researcher from Technical University of Denmark. The author has contributed to research in topics: Quantum dot & Nanowire. The author has an hindex of 22, co-authored 63 publications receiving 2726 citations. Previous affiliations of Nika Akopian include Technion – Israel Institute of Technology & Kavli Institute of Nanoscience.
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Journal ArticleDOI
Growth and optical properties of axial hybrid III–V/silicon nanowires
Moïra Hocevar,George Immink,Marcel A. Verheijen,Marcel A. Verheijen,Nika Akopian,Val Zwiller,Leo P. Kouwenhoven,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers +8 more
TL;DR: A silicon nanowire with an integrated gallium-arsenide segment is demonstrated and it is anticipated that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.
Journal ArticleDOI
Superconducting single photon detectors with minimized polarization dependence
Sander N. Dorenbos,E. Reiger,Nika Akopian,U. Perinetti,Val Zwiller,Tony Zijlstra,Teun M. Klapwijk +6 more
TL;DR: In this article, the authors designed two new geometries for which the polarization dependence is minimized: a detector with two meander-type parts oriented perpendicular with respect to each other and a spiraling detector.
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Selective excitation and detection of spin states in a single nanowire quantum dot.
Maarten H. M. van Weert,Nika Akopian,U. Perinetti,Maarten P. van Kouwen,Rienk E. Algra,Marcel A. Verheijen,Erik P. A. M. Bakkers,Leo P. Kouwenhoven,Val Zwiller +8 more
TL;DR: These experiments demonstrate the potential of this system to form a quantum interface between photons and electrons and can prepare a given spin state by tuning excitation polarization or excitation energy.
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Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation.
TL;DR: It is shown via InP nanowires that as the nanowire diameter decreases, quantum-confinement alters this basic material property, placing both electrons and holes on the same (ZB) phase.
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Room temperature demonstration of GaN /AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
Alon Vardi,Nika Akopian,Gad Bahir,L. Doyennette,Maria Tchernycheva,Laurent Nevou,F. H. Julien,Fabien Guillot,Eva Monroy +8 more
TL;DR: In this paper, the authors fabricated a communication wavelength photodetector based on intraband transition in GaN∕AlN self-assembled quantum dot heterostructures, which is based on in-plane transport and has a room temperature spectral peak responsivity of 8mA∕W at wavelength of 1.41μm.