P
Pramod Kumar Tiwari
Researcher at Indian Institute of Technology Patna
Publications - 140
Citations - 1240
Pramod Kumar Tiwari is an academic researcher from Indian Institute of Technology Patna. The author has contributed to research in topics: MOSFET & Subthreshold conduction. The author has an hindex of 18, co-authored 125 publications receiving 968 citations. Previous affiliations of Pramod Kumar Tiwari include Jiwaji University & National Institute of Technology, Rourkela.
Papers
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Investigation of Temperature and Source/Drain Overlap Impact on Negative Capacitance Silicon Nanotube FET (NC Si NTFET) with Sub-60mV/decade Switching
TL;DR: The impact of temperature and source/drain overlap on DC characteristics and analog/RF performance of the negative capacitance silicon nanotube FET (NC Si NTFET) have been presented.
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Drain current modelling of double gate-all-around (DGAA) MOSFETs
TL;DR: An analytical modelling of drain current is presented for double gate-all-around (DGAA) MOSFETs and I–V characteristics and transconductance of the device for various physical parameters are compared and analysed with the numerical simulation results obtained from Visual-TCAD of Cogenda Int.
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Analog and radio-frequency (RF) performance evaluation of fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs
TL;DR: In this paper, a simulation based extensive study is carried out to evaluate the analog and RF performance of source/drain and gate engineered ultrathin body SOI MOSFETs, as both the digital and analog performance of the device must be excellent for SOC applications.
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Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs
Vaibhav Purwar,Rajeev Gupta,Nitish Kumar,Himanshi Awasthi,Vijay Kumar Dixit,Kunal Singh,Sarvesh Dubey,Pramod Kumar Tiwari +7 more
TL;DR: In this paper, a double gate-all-around (DGAA) MOSFET with high-K dielectric as gate oxide is employed to improve the ON-state current with enhanced device scalability.
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A Proposal for an Electrostatic Doping-Assisted Electroabsorption Modulator for Intrachip Communication
TL;DR: In this article, a CMOS compatible penta-electrode charge-plasma diode-based optical electroabsorption modulator (EAM) was proposed, which is junctionless and employs electrostatic doping in the semiconductor to change its absorption coefficient.