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Pramod Kumar Tiwari

Researcher at Indian Institute of Technology Patna

Publications -  140
Citations -  1240

Pramod Kumar Tiwari is an academic researcher from Indian Institute of Technology Patna. The author has contributed to research in topics: MOSFET & Subthreshold conduction. The author has an hindex of 18, co-authored 125 publications receiving 968 citations. Previous affiliations of Pramod Kumar Tiwari include Jiwaji University & National Institute of Technology, Rourkela.

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Journal ArticleDOI

Epigenetic Biomarkers in Gallbladder Cancer.

TL;DR: The recent discovery of epigenetic changes that show great promise as diagnostic biomarkers as well as potential therapeutic targets for GBC are discussed.
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The liver function test enzymes and glucose level are positively correlated in gallbladder cancer: a cancer registry data analysis from north central India.

TL;DR: Simultaneous elevation of glucose and liver function test enzymes in GBC makes the diagnosis complex, and any patient of gallbladder diseases with higher level of glucose may have the possibility of developing gallbladders cancer.
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An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

TL;DR: In this article, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium (Si 1-x Ge x ) MOSFET structure.
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In vitro induction of 60-kDa and 70-kDa heat shock proteins by endosulphan and monocrotophos in sheep blowfly Lucilia cuprina.

TL;DR: Gut tissues were found relatively more sensitive to pesticide toxicity than other tissues, as revealed by trypan blue staining, and hence, they might serve as primary targets for early detection of pesticide toxicity.
Posted ContentDOI

Investigating the Impact of Self-Heating Effects on Some Thermal and Electrical Characteristics of Dielectric Pocket Gate-All-Around (DPGAA) MOSFETs

TL;DR: In this article, a comprehensive investigation under the influence of self-heating effects has been done for the variation in the lattice and carrier temperature against spacer length, ambient temperature, device length, and thermal contact resistance including ON and Off currents with gate bias voltage (VGS).