P
Pramod Kumar Tiwari
Researcher at Indian Institute of Technology Patna
Publications - 140
Citations - 1240
Pramod Kumar Tiwari is an academic researcher from Indian Institute of Technology Patna. The author has contributed to research in topics: MOSFET & Subthreshold conduction. The author has an hindex of 18, co-authored 125 publications receiving 968 citations. Previous affiliations of Pramod Kumar Tiwari include Jiwaji University & National Institute of Technology, Rourkela.
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An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs
TL;DR: In this article, 3-dimensional (3-D) electrothermal simulations using coupled hydrodynamic and thermodynamic transport models are performed to analyze the electrothermodynamic behavior and self-heating effects in ultra-thin DGAA MOSFETs.
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Elevated level of serum LDH2 and LDH3 in sputum three positive TB patients of Sahariya Tribe: A preliminary study
TL;DR: A strong association ofLDH3 with sputum three positive or severe cases of mycobacterial infection is suggested, indicating a likely possibility of using LDH3 as a supporting diagnostic marker in, at least, cases of chronic tuberculosis.
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Dermatoglyphic variations in five ethno-geographical cohorts of Indian populations: A Pilot Study
TL;DR: Interestingly, blood group “O” and “AB” were found significantly associated with “whorl”and “loop” fingerprint pattern types in each cohort, and blood group’s dominant allele for hand clasping and thumb extension traits was dominant while recessive allele for the same was dominant.
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Restriction fragment length polymorphism of mitochondrial DNA and phylogenetic relationships among five species of Indian freshwater turtles.
TL;DR: The molecular method (PCR-RFLP) developed here is simple, rapid, reliable and reproducible; hence it can be routinely applied for species identification, essential for conservation and management of endangered chelonian species.
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Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs
TL;DR: In this article, surface potential-based analytical models of subthreshold current and sub-reshold swing of the strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs were presented.