Statistical method for testing the neutral mutation hypothesis by DNA polymorphism.

Microbial decolouration of azo dyes: a review.

Gallbladder cancer is a malignancy of biliary tract which is infrequent in developed countries but common in some specific geographical regions of developing countries. Late diagnosis and deprived prognosis are major problems for treatment of gallbladder carcinoma. The dramatic associations of this orphan cancer with various genetic and environmental factors are responsible for its poorly defined pathogenesis. An understanding to the relationship between epidemiology, molecular genetics and pathogenesis of gallbladder cancer can add new insights to its undetermined pathophysiology. Present review article provides a recent update regarding epidemiology, pathogenesis, and molecular genetics of gallbladder cancer. We systematically reviewed published literature on gallbladder cancer from online search engine PubMed (http://www.ncbi.nlm.nih.gov/pubmed). Various keywords used for retrieval of articles were Gallbladder, cancer Epidemiology, molecular genetics and bullion operators like AND, OR, NOT. Cross references were manually searched from various online search engines (http://www.ncbi.nlm.nih.gov/pubmed,https://scholar.google.co.in/, http://www.medline.com/home.jsp). Most of the articles published from 1982 to 2015 in peer reviewed journals have been included in this review.

Gallbladder cancer epidemiology, pathogenesis and molecular genetics: Recent update.

LncRNA HOXA-AS2 and its molecular mechanisms in human cancer.

Discharge of untreated domestic and industrial wastewater into aquatic bodies is posing a serious eutrophication threat, leading to a slow degradation of the water resources. A number of physical, chemical and biological methods have been developed for the treatment of wastewaters; among these, the use of microalgae is considered as a more eco-friendly and economical approaches. Microalgae are versatile organisms which perform multiple roles in the environment—bioremediation of wastewater, gleaning of excess nutrients and in turn, generate valuable biomass which finds applications in the food, biofuel and pharmaceutical industries. They are currently being utilized to reduce the high nutrient load (especially N and P) from wastewaters, which fulfill the growth requirements of microalgae, making it a suitable cultivation medium for biomass production. The present review represents a comprehensive compilation of reports on microalgal diversity of wastewaters, followed by a critical overview of their utilization, suitability and potential in bioremediation vis-a-vis biomass production. This review also emphasizes the superiority of polyalgal and consortial approaches in wastewater treatment, as compared to the use of unialgal inocula, besides providing useful pointers for future research needs in this area.

/pdf/phycoremediation-of-wastewaters-a-synergistic-approach-using-2ljwnrdbyv.pdf

Phycoremediation of wastewaters: a synergistic approach using microalgae for bioremediation and biomass generation

This paper reports a compact drain current model of silicon nanotube-based double gate all around (DGAA) MOSFET incorporating short channel effects (SCEs). The drain current equation is expressed as a function of charge density, which is derived using the unified surface potential expressions. Fermi-Dirac statistics, the 1-dimensional density of states and Gauss's law have been utilized to develop the analytical expressions of unified surface potentials and charge density. The proposed compact model also takes into account of quantum confinement effects which is significant in devices with the ultra-thin channel region. The SCEs such as velocity saturation effect, threshold voltage roll-off, DIBL, channel length modulation, velocity overshoot, and mobility degradation are well incorporated in the developed model in order to correctly predict the device output and transfer characteristics. Results obtained from the proposed compact drain current model have been validated with TCAD results obtained from the Sentauras device simulator.

Compact Drain Current Model of Silicon-Nanotubebased Double Gate-All-Around (DGAA) MOSFETs Incorporating Short Channel Effects

In0.53Ga0.47As based gate-all-around (GAA) MOSFETs are very promising for high frequency applications because they deliver higher current and transconductance compared to their Si counterparts. In ultra-short GAA nanowire (NW) and nanosheet (NS) MOSFETs, heat accumulation in the channel region has become a serious issue as it raises the average lattice temperature several degrees above the ambient temperature (<inline-formula> <tex-math notation="LaTeX">$\text{T}_{\text A}$ </tex-math></inline-formula>). The increment in the average lattice temperature, also known as self-heating, degrades current driving capability and the linearity behaviour of the devices. In this work, the impact of self-heating on the linearity performance of In0.53Ga0.47As based GAA NW and NS MOSFETs has been investigated with the assistance of thermally calibrated TCAD simulation results. The effects of structural parameters of NW and NS MOSFETs, like gate oxide thickness (TOX), the diameter of nanowire (d), the width of nanosheet (W), and the number of nanowires/nanosheets (N) on linearity performance have been extensively studied using the linearity figure of merits, such as VIP3, and IIP3. Moreover, the impact of self-heating mitigating techniques on the linearity performance of devices has also been explored in this work.

Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs

In this work, a simulation based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLAS™ from Silvaco Inc.

http://dspace.nitrkl.ac.in/dspace/bitstream/2080/1909/1/SANTUNU_CONFERENCE_PAPER_KERALA.pdf

A simulation-based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs

HLA-A*02 repertoires in three defined population groups from North and Central India: Punjabi Khatries, Kashmiri Brahmins and Sahariya Tribe.

In this paper, an analytical surface potential model is developed for short-channel Strained-Si on Silicon-Germanium MOSFET including the effect of interface charges, which are both positive and negative in polarity. The two-dimensional Poisson’s equation is solved in the undamaged and damaged strained-Si and relaxed Si1-xGex regions to find the surface potential in the channel. The effects of variations in damaged length and interface charge density on the surface potential are discussed comprehensively. The surface potential dependency on the variation in the germanium mole fraction of silicongermanium layer is also discussed. The results obtained from the developed model have been compared with the numerical simulations obtained using ATLAS

Pramod Kumar Tiwari

Papers

Compact Drain Current Model of Silicon-Nanotubebased Double Gate-All-Around (DGAA) MOSFETs Incorporating Short Channel Effects

Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs

A simulation-based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs

HLA-A*02 repertoires in three defined population groups from North and Central India: Punjabi Khatries, Kashmiri Brahmins and Sahariya Tribe.

AN ANALYTICAL SURFACE POTENTIAL MODEL FOR STRAINED-Si ON SILICON- GERMANIUM MOSFET INCLUDING THE EFFECTS OF INTERFACE CHARGES