R
R. G. R. Weemaes
Researcher at Philips
Publications - 16
Citations - 453
R. G. R. Weemaes is an academic researcher from Philips. The author has contributed to research in topics: PMOS logic & Short-channel effect. The author has an hindex of 8, co-authored 16 publications receiving 439 citations.
Papers
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Journal ArticleDOI
Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon
Johan Hendrik Klootwijk,K. B. Jinesh,Wouter Dekkers,J. F.C. Verhoeven,F.C. van den Heuvel,H.-D. Kim,D. Blin,Marcel A. Verheijen,R. G. R. Weemaes,Monja Kaiser,J. Ruigrok,Fred Roozeboom +11 more
TL;DR: In this paper, an atomic-layer deposition (ALD) was used to achieve an ultra-high capacitance density of 440 at a breakdown voltage VDB > 6 V on a silicon substrate containing high-aspect-ratio macropore arrays.
Journal ArticleDOI
Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors
Ray Duffy,M.J.H. van Dal,Bartlomiej Jan Pawlak,Monja Kaiser,R. G. R. Weemaes,Bart Degroote,Eddy Kunnen,E. Altamirano +7 more
TL;DR: In this article, the authors investigate the implications of amorphizing ion implants on the crystalline integrity of sub-20nm wide fin field effect transistors (FinFETs).
Proceedings ArticleDOI
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
M.J.H. van Dal,Nadine Collaert,G. Doornbos,Georgios Vellianitis,Gilberto Curatola,Bartek Pawlak,Ray Duffy,C. Jonville,Bart Degroote,E. Altamirano,Eddy Kunnen,Marc Demand,Stephan Beckx,T. Vandeweyer,C. Delvaux,Frederik Leys,Andriy Hikavyy,Rita Rooyackers,Monja Kaiser,R. G. R. Weemaes,Serge Biesemans,Malgorzata Jurczak,K.G. Anil,Liesbeth Witters,Rob Lander +24 more
TL;DR: In this paper, the authors investigated scalability, performance and variability of high aspect ratio trigate FinFETs fabricated with 193 nm immersion lithography and conventional dry etch.
Proceedings ArticleDOI
Gatestacks for scalable high-performance FinFETs
Georgios Vellianitis,M.J.H. van Dal,Liesbeth Witters,G. Curatola,Gerben Doornbos,Nadine Collaert,C. Jonville,C. Torregiani,Li-Shyue Lai,J. Petty,Bartek Pawlak,Ray Duffy,Marc Demand,Stephan Beckx,Sofie Mertens,Annelies Delabie,T. Vandeweyer,C. Delvaux,Frederik Leys,Andriy Hikavyy,Rita Rooyackers,Monja Kaiser,R. G. R. Weemaes,F.C. Voogt,H. Roberts,D. Donnet,Serge Biesemans,Malgorzata Jurczak,R.J.R. Lander +28 more
TL;DR: In this paper, PVD TiN electrodes on Hf SiO dielectrics are shown to give improved NMOS performance over PEALD TiN whilst poorer conformality, for both dielectric and gate electrode, does not appear to impact scalability or performance.
Journal ArticleDOI
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Jay Mody,Ray Duffy,Pierre Eyben,Jozefien Goossens,Alain Moussa,Wouter Polspoel,Bart Berghmans,M.J.H. van Dal,Bartlomiej Jan Pawlak,Monja Kaiser,R. G. R. Weemaes,Wilfried Vandervorst +11 more
TL;DR: In this paper, a methodology involving secondary ion mass spectrometry (SIMS) is presented to study the dose conformality in fin field effect transistors (FinFETs).