R. Gillon

TL;DR: An original scheme is presented, which allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method.

TL;DR: In this article, N-type field effect transistors have been fabricated in a complementary metal oxide-semiconductor compatible thin-film silicon-on-insulator technology with titanium, cobalt, and nickel self-aligned silicide processes for lowvoltage, low-power microwave applications.

TL;DR: In this article, the authors demonstrate that FD SOI MOSFETs exhibit near-ideal body factor, sub-threshold slope and current drive properties for mixed fabrication and operation under low supply voltage of analog, digital and microwave components.

TL;DR: In this paper, the high-frequency performances of microwave transistors fabricated using a standard fully-depleted SOI CMOS process are described, which are compatible with analog and digital circuits fabricated using the same low-cost process.

TL;DR: In this paper, a linear regression technique is used to solve the extraction problem of series equivalent circuit elements values from S-parameters measurements at a single bias point in saturation, and the resulting algorithm is very simple and efficient when compared to optimizer-driven approaches.