Runsheng Wang

TL;DR: In this paper, a correlated-mobility fluctuation model can explain the LFN behavior at low drain current, while significant noise enhancement is observed at high current region due to the impact of parasitic resistance of the ultra-narrow SDE regions in the nanowire transistors.

TL;DR: HybridNet as mentioned in this paper constructs two individual graphs (geometry-graph, topology-graph) with distinct edge construction schemes according to their unique properties, and then proposes a dual-branch network with different encoder layers in each pathway and aggregate representations with a sophisticated fusion strategy.

TL;DR: In this paper, a positive photoresist is coated on a semiconductor substrate, then exposed by means of a circular mask having a micron-grade diameter to obtain ring shaped photoresists and then plasma etching is carried out on the substrate under the protection of the ring-shaped photoresis to form a ring shape with nano-sized wall thickness on the surface of the substrate.

TL;DR: Based on a special type of stochastic encoding, the parallel thermometer coding, an accurate design for the combination of the accumulation and non-linear function, which is called a nonlinear adder is proposed, which achieves more than three orders of magnitude improvement in accuracy and at least 44.5× energy consumption reduction compared with the traditional designs.

TL;DR: In this article , a short-term Negative Bias Temperature Instability (NBTI) was investigated in sub-20-nm DRAM technology by using Variable Amplitude Charge Pumping measurement.