Runsheng Wang

TL;DR: A new AC RTN characterization method is proposed, which can simply catch the missing RTN statistics beyond the narrow “detectable window” of VG in conventional DC RTN method, thus is powerful for studying RTN under practical full-swing AC bias.

TL;DR: In this article, a new methodology for the assessment of end-of-life variability of NBTI is proposed for the first time, by introducing the concept of characteristic failure probability, the uncertainty in the predicted 10-year VDD is addressed.

TL;DR: In this article, a simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed, and the effectiveness of the proposed method is confirmed through both TCAD simulations and experimental results.

TL;DR: In this paper, the frequency dependence of the dynamic variation induced by AC NBTI aging in scaled high-κ/metal-gate devices is experimentally studied for the first time, and the results are helpful for the future variability-aware circuit design.

TL;DR: In this paper, the authors investigated the characteristics of localized-SOI MOSFETs for analog/RF applications, where the source and drain regions are quasi-surrounded by L-type oxide layers to reduce junction capacitance and avoid source/drain punchthrough, while the channel is directly connected with the substrate to alleviate the self-heating effect.