Journal ArticleDOI
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim,Sunae Seo,Seung-Eon Ahn,Dongseok Suh,Myoung-Jae Lee,B.-H. Park,I. K. Yoo,I. G. Baek,Hyeok Kim,E. K. Yim,J. E. Lee,Park Soon,Hyun-Suk Kim,U-In Chung,J. T. Moon,B. I. Ryu +15 more
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TLDR
In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.Abstract:
Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.read more
Citations
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Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Resistive switching in transition metal oxides
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.
Journal ArticleDOI
Memory effects in complex materials and nanoscale systems
TL;DR: The memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics are described within the framework of memristors, memcapacitors and meminductors.
Journal ArticleDOI
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
TL;DR: TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with and appear to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events.
Journal ArticleDOI
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
TL;DR: In this article, high-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature and the Pt∕ZnO∕Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage.
References
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Journal ArticleDOI
Reproducible resistance switching in polycrystalline NiO films
Sunae Seo,Myoung-Jae Lee,David H. Seo,E. J. Jeoung,Dongseok Suh,Y. S. Joung,I. K. Yoo,Inrok Hwang,Sang-Hyun Kim,Ik-Su Byun,Jin-Soo Kim,Jin Sik Choi,Bae Ho Park +12 more
TL;DR: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods in this paper, where the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small polaron hole hopping conduction.
Journal ArticleDOI
Electrical phenomena in amorphous oxide films
TL;DR: In this article, a review of the observed properties of metal-insulator-metal devices involving such insulating layers, and the mechanisms which have been proposed for their operation are discussed.
Journal ArticleDOI
Conductivity switching characteristics and reset currents in NiO films
Sunae Seo,Myoung-Jae Lee,David H. Seo,S. K. Choi,Dongseok Suh,Y. S. Joung,I. K. Yoo,Ik-Su Byun,Inrok Hwang,Sang-Hyun Kim,Bae Ho Park +10 more
TL;DR: In this article, a series structure consisting of two Pt∕NiO∕Pt capacitors with different resistance values was proposed to reduce the reset current by two orders of magnitude.
Journal ArticleDOI
Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition
TL;DR: Heteroepitaxial CeO2(80 nm)/L0.67Ca0.33MnO3(400 nm) film structures have been pulsed laser deposited on LaAlO3 (001) single crystals to fabricate two terminal resistance switching devices.
Journal ArticleDOI
A new filamentary model for voltage formed amorphous oxide films
J.E. Ralph,J.M. Woodcock +1 more
TL;DR: In this paper, a model is proposed to account for the conduction, negative resistance, electron emission, electro-luminescence and other features of thin amorphous oxide films, based on the purely electronic characteristics expected from filamentary regions containing a broad impurity or defect band.