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Shey-Shi Lu

Researcher at National Taiwan University

Publications -  300
Citations -  3680

Shey-Shi Lu is an academic researcher from National Taiwan University. The author has contributed to research in topics: CMOS & Noise figure. The author has an hindex of 30, co-authored 300 publications receiving 3431 citations. Previous affiliations of Shey-Shi Lu include National Chi Nan University & National Taiwan University of Science and Technology.

Papers
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A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption

TL;DR: In this article, the design principles of CMOS low-noise amplifiers (LNAs) for simultaneous input impedance and noise matching by tailoring device size for R/sub opt/=50 /spl Omega/ are introduced.
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Analysis and Design of a CMOS UWB LNA With Dual- $RLC$ -Branch Wideband Input Matching Network

TL;DR: In this paper, a wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed, which takes advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel RLC-branches.
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Analysis and Design of a 1.6–28-GHz Compact Wideband LNA in 90-nm CMOS Using a $ \pi $ -Match Input Network

TL;DR: In this paper, a wideband low-noise amplifier (LNA) based on the cascode configuration with resistive feedback is presented, which achieves S11 below -10 dB, S22 below - 10 dB, flat S21 of 9.6 ± 1.1 dB, and flat NF of 3.68 ± 0.72 dB over the 1.6-28 GHz band.
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A Self-Powered CMOS Reconfigurable Multi-Sensor SoC for Biomedical Applications

TL;DR: A highly adaptive multi-sensor SoC comprising four on-chip sensors and a smart wireless acquisition system is first realized in standard CMOS process and Experimental results show that four physiological parameters can be simultaneously monitored using this chip.
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The origin of the kink phenomenon of transistor scattering parameter S/sub 22/

TL;DR: In this article, a dual-feedback circuit methodology is proposed to explain the kink phenomenon of transistor scattering parameter S/sub 22/ in a Smith chart, which can predict the behavior of all transistors and calculate all S-parameters accurately.