Journal ArticleDOI
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
Shoji Ikeda,Jun Hayakawa,Yoshito Ashizawa,Y. M. Lee,Katsuya Miura,Katsuya Miura,H. Hasegawa,Masakiyo Tsunoda,F. Matsukura,Hideo Ohno +9 more
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TLDR
In this article, the authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕SiO2 or Co20Fe 60B20 ∕Ta pseudo-spin-valve magnetic tunnel junction junction annealed at 525°C.Abstract:
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB∕MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450°C. The highest TMR ratio observed at 5K was 1144%.read more
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Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI
Graphene Spintronics
TL;DR: The experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene are reviewed.
Journal ArticleDOI
Current-induced torques in magnetic materials
TL;DR: How currents can generate torques that affect the magnetic orientation and the reciprocal effect in a wide variety of magnetic materials and structures is explained.
Journal ArticleDOI
Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures.
Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David Cobden,Di Xiao,Wang Yao,Xiaodong Xu +14 more
TL;DR: The possibility to push magnetic information storage to the atomically thin limit and CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices is revealed.
Journal ArticleDOI
Dilute ferromagnetic semiconductors: Physics and spintronic structures
TL;DR: In this article, a review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering.
References
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Journal ArticleDOI
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
TL;DR: A giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs is reported, indicating that coherency of wave functions is conserved across the tunnel barrier.
Journal ArticleDOI
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Stuart S. P. Parkin,Christian Kaiser,Alex Panchula,Philip M. Rice,Brian M. Hughes,Mahesh G. Samant,See-Hun Yang +6 more
TL;DR: Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Journal ArticleDOI
Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches
TL;DR: In this paper, first-principles based calculations of the tunneling conductance and magnetoconductance of epitaxial ''mathrm{Fe}(100)|\mathm{MgO''(100), ''mgO''.
Journal ArticleDOI
Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction
J. Mathon,A. Umerski +1 more
TL;DR: In this article, the tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction was determined without any approximations from the real-space Kubo formula using tight-binding bands fitted to an ab initio band structure of iron and MgO.
Journal ArticleDOI
230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
David D. Djayaprawira,K. Tsunekawa,Motonobu Nagai,H. Maehara,Shinji Yamagata,Naoki Watanabe,Shinji Yuasa,Koji Ando +7 more
TL;DR: The magnetoresistance ratio of 230% at room temperature is reported in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates.