S
Spyridon Pavlidis
Researcher at North Carolina State University
Publications - 46
Citations - 471
Spyridon Pavlidis is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gallium nitride & Amplifier. The author has an hindex of 8, co-authored 34 publications receiving 323 citations. Previous affiliations of Spyridon Pavlidis include Georgia Institute of Technology.
Papers
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Journal ArticleDOI
Size‐Scalable and High‐Density Liquid‐Metal‐Based Soft Electronic Passive Components and Circuits Using Soft Lithography
TL;DR: In this paper, an advanced liquid metal thin-line patterning process based on soft lithography and a compatible vertical integration technique is presented that enable size-scalable and high-density EGaIn-based, soft microelectronic components and circuits.
Proceedings ArticleDOI
Aerosol jet printing for 3-D multilayer passive microwave circuitry
TL;DR: Aerosol jet printed 3D coplanar waveguides up to 50 GHz are demonstrated in this paper for the first time featuring a multilayer aerosol jet deposition process.
Proceedings ArticleDOI
High resolution aerosol jet printing of D-band printed transmission lines on flexible LCP substrate
TL;DR: In this paper, the authors describe the fabrication process, the technology assessment and the characterization of coplanar waveguides (CPW) lines and CPW to microstrip transitions on liquid crystal polymer (LCP) in the D band using silver nanoparticle aerosol jet printing process.
Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Journal ArticleDOI
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Pramod Reddy,M. Hayden Breckenridge,Qiang Guo,Andrew Klump,Dolar Khachariya,Spyridon Pavlidis,W. J. Mecouch,Seiji Mita,Baxter Moody,James Tweedie,Ronny Kirste,Erhard Kohn,Ramon Collazo,Zlatko Sitar +13 more
TL;DR: In this article, a large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100