S
Stefan E. Schulz
Researcher at Fraunhofer Society
Publications - 240
Citations - 2508
Stefan E. Schulz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Carbon nanotube & Dielectric. The author has an hindex of 22, co-authored 235 publications receiving 2144 citations. Previous affiliations of Stefan E. Schulz include Helmholtz-Zentrum Dresden-Rossendorf & Chemnitz University of Technology.
Papers
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Journal ArticleDOI
Optimizing sonication parameters for dispersion of single-walled carbon nanotubes
Haibo Yu,Haibo Yu,Sascha Hermann,Stefan E. Schulz,Stefan E. Schulz,Thomas Gessner,Thomas Gessner,Zaili Dong,Wen J. Li,Wen J. Li +9 more
TL;DR: In this paper, the influence of the sonication power and time on the dispersion of single-walled carbon nanotubes (SWCNTs) is investigated. And the diameter and length of SWCNT are investigated using atomic force microscopy (AFM).
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Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2
Thomas Waechtler,Steffen Oswald,Nina Roth,Alexander Jakob,Heinrich Lang,Ramona Ecke,Stefan E. Schulz,Thomas Gessner,Anastasia Moskvinova,Steffen Schulze,Michael Hietschold +10 more
TL;DR: In this article, the thermal atomic layer deposition (ALD) of copper oxide films from the nonfluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [( n Bu 3 P) 2 Cu(acac)], and wet O 2 on Ta, TaN, Ru, and SiO 2 substrates at temperatures of < 160°C is reported.
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Development of different copper seed layers with respect to the copper electroplating process
TL;DR: Two types of copper seed layers deposited by MOCVD and long throw sputtering onto a tantalum barrier layer were used for electroplating (EP) of copper in the forward pulsed mode as mentioned in this paper.
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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO 2 xerogel films
C. Murray,C.M. Flannery,I. Streiter,Stefan E. Schulz,M. R. Baklanov,K. P. Mogilnikov,Cameliu Himcinschi,Marion Friedrich,Dietrich R. T. Zahn,Thomas Gessner +9 more
TL;DR: A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation as mentioned in this paper.
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Thermal conductivity of ultra low- k dielectrics
TL;DR: In this article, the 3ω measurement technique was used to determine the thermal conductivity of thin thin dielectric materials using special test structure fabrication, and the results showed that the thermal performance of the porous low-k dielectrics obtained is only between 7 and 13% of that of thermally grown silicon dioxide.