W
W. Graham
Researcher at IBM
Publications - 25
Citations - 980
W. Graham is an academic researcher from IBM. The author has contributed to research in topics: Polyimide & Layer (electronics). The author has an hindex of 11, co-authored 25 publications receiving 953 citations.
Papers
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Proceedings ArticleDOI
Patterning of CMOS device structures for 40-80nm pitches and beyond
Sebastian Engelmann,Ryan M. Martin,Robert L. Bruce,Hiroyuki Miyazoe,Nicholas C. M. Fuller,W. Graham,E. Sikorski,Martin Glodde,Markus Brink,Hsinyu Tsai,J.J. Bucchignano,D. Klaus,E. Kratschmer,M. Guillorn +13 more
TL;DR: In this article, the pattern transfer from a soft mask (carbon-based) material into a hard mask material was shown to be a very characteristic phenomenon that mechanical failure of the soft material may be observed.
Proceedings Article
A 0.021 µm 2 trigate SRAM cell with aggressively scaled gate and contact pitch
M. Guillorn,Josephine B. Chang,A. Pyzyna,Sebastian Engelmann,Martin Glodde,Eric A. Joseph,Robert L. Bruce,John A. Ott,Amlan Majumdar,Fei Liu,Markus Brink,Sarunya Bangsaruntip,Marwan H. Khater,S. Mauer,Isaac Lauer,Christian Lavoie,Zhen Zhang,J. Newbury,E. Kratschmer,D. Klaus,J.J. Bucchignano,B. To,W. Graham,E. Sikorski,Vijay Narayanan,Nicholas C. M. Fuller,W. Haensch +26 more
TL;DR: In this article, the authors present the highest density demonstration of CMOS technology reported to date featuring a 6T SRAM cell size of 0.021 µm2 (Fig. 1).
Proceedings ArticleDOI
Fabrication and performance studies of multilayer polymer/metal interconnect structures for packaging applications
Jurij R. Paraszczak,J. Cataldo,Eileen A. Galligan,W. Graham,Richard P Mcgouey,Sharon L. Nunes,Russell J. Serino,D. Y. Shih,Edward D. Babich,Alina Deutsch,G.V. Kopcsay,Ronald D. Goldblatt,Donald C. Hofer,J. W. Labadie,J. L. Hedrick,Chandrasekhar Narayan,Katherine L. Saenger,J. M. Shaw,Vincent Ranieri,John J. Ritsko,Laura Beth Rothman,W. Volksen,Janusz S. Wilczynski,David F. Witman,Helen Li Yeh +24 more
TL;DR: In this article, a multi-layer copper/polyimide interconnect structure was fabricated using a reactive-ion-etching-based lift-off technique using a novel siloxane polyimide.
Journal ArticleDOI
Factors affecting the interconnection resistance and yield in multilayer polyimide/copper structures
D.-Y. Shih,Helen Li Yeh,Jurij R. Paraszczak,J. Lewis,W. Graham,Sharon L. Nunes,Chandrasekhar Narayan,Richard P Mcgouey,Eileen A. Galligan,J. Cataldo,Russell J. Serino,Eric D. Perfecto,C.-A. Chang,Alina Deutsch,Laura Beth Rothman,John J. Ritsko,Janusz S. Wilczynski +16 more
TL;DR: In this article, the use of a lift-off technique to fabricate a high-density structure consisting of multiple layers of metal/polyimide thin-film structures on a silicon substrate is described.
Patent
Method for electroless deposition and patterning of a metal on a substrate
Emmanuel Delamarche,John C. Flake,Matthias Geissler,W. Graham,Roy H. Magnuson,Bruno Michel,Heinz Schmid +6 more
TL;DR: In this paper, a method for manufacturing a patterned metal layer on a substrate is provided which comprises the step of electrolessly depositing a blanket metal film of a metal onto a substrate, followed by subsequently patterning said metal layer by means of microcontact printing.