Xiaohua Ma

TL;DR: In this article, the assembly of Sn on Cu nanorods electrode exhibited highly reversible specific capacity and superior capacity retention resulting from the three-dimensionalally nano-architectured design, which exhibits a large surface area, shortened Li-ion diffusion distance, Cu-Sn alloying, and can accommodate the volume expansion of Sn during cycling.

TL;DR: In this article , 2D molybdenum disulfide (MoS2) nanosheets were used to endow the electrospray-assisted interfacial polymerization polyamide membrane with improved selectivity at a short spray time.

TL;DR: In this article, a combination of drain field plate (FP) and Schottky drain was proposed to improve the reverse blocking capability of high-electron mobility transistors (HEMTs).

TL;DR: Step-wise combination of NH3 with BH4(-) was found to proceed in the AlCl3·mNH3-nLiBH4 system, but the residual N-H bonds could react further with excess B-H Bonds at elevated temperature.

TL;DR: In this paper, a recessed-gate Al2O3 MIS-HEMT with three etching times (15 s, 17 s, and 19 s) was used to solve the interface trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs).