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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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All‐in‐One Compression and Encryption Engine Based on Flexible Polyimide Memristor
Rui Wang,Saisai Wang,Yuhan Xin,Yaxiong Cao,Yu Liang,Yaqian Peng,Jie Feng,Yang Li,Ling Lv,Xiaohua Ma,Hong Wang,Yue Hao +11 more
TL;DR: In this paper , a compression and encryption engine with a single chip was proposed for the Internet of Things (IoT), where the Gaussian conductance distribution was used to achieve compressed sensing (CS) to integrate encryption into compression, and the spontaneous formation of the one-time-sampling measurement matrix satisfies absolute security.
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Room temperature asymmetric negative differential resistance characteristics of AlGaN/GaN resonant tunneling diodes grown by metal-organic chemical vapor deposition
TL;DR: In this article, a large area AlGaN/GaN resonant tunneling diode (RTD) grown by metal-organic chemical vapor deposition (MOCVD) is manufactured.
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Ti4O7/g‐C3N4 Nanocomposites as an Excellently Durable and Active Electrocatalyst for Oxygen Reduction Reaction
TL;DR: In this article , a Ti4O7/g-C3N4 nanocomposites were successfully prepared by hydrothermal and carbothermal reduction reaction and showed good catalytic activity in alkaline medium.
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Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor
Yaxiong Cao,Saisai Wang,Rui Wang,Yuhan Xin,Yaqian Peng,Jing Sun,Mei Yang,Xiaohua Ma,Ling Lv,Hong Wang,Yue Hao +10 more
TL;DR: In this article , a fully biocompatible and biodegradable threshold switching (TS) memristor consisting of W/MgO/mg/W configuration was proposed as an artificial nociceptor.
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
Maodan Ma,Yan-Rong Cao,Hanghang Lv,Zhiheng Wang,Xinxiang Zhang,Chuan Chen,Linshan Wu,Ling Lv,Xue-Feng Zheng,Wenchao Tian,Xiaohua Ma,Yue Hao +11 more
TL;DR: In this article , the authors used TCAD software to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer.