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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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MXene/PEO aerogels with two-hierarchically porous architecture for electromagnetic wave absorption
TL;DR: In this article , a two-hierarchically porous network of MXene/PEO aerogels is constructed where the 3D porous network is assembled by MXene layers featuring with secondary pore structure.
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Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage
TL;DR: In this paper, the authors proposed the use of traveling wave tubes (WTRs) for high-frequency and high-power applications, although the vacuum tube is large in size and hard to integrate.
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Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs
Ling Yang,Mei Wu,Bin Hou,Minhan Mi,Meng Zhang,Qing Zhu,Yang Lu,Xiaowei Zhou,Ling Lv,Xiaohua Ma,Yue Hao +10 more
TL;DR: In this article, a new in situ SiN/AlGaN-sandwich-barrier (SWB)/Al0.05GaN high-electron mobility transistors (HEMTs) was proposed to further improve the electrical characteristics of AlGaN buffer devices.
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Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
Jiangmei Feng,Jiangmei Feng,Huajun Shen,Xiaohua Ma,Yun Bai,Jia Wu,Chengzhan Li,Ke-An Liu,Xinyu Liu +8 more
TL;DR: In this article, the authors investigated the characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer and found that the forward voltage drops of the 4HSiC piN with this layer were around 3.3 V, which is lower than that of devices without carbon implantation, and the specific-on resistance was decreased from 9.35 to 4.38 mΩcm2 at 100 A/cm2.
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High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an f T/f max over 100 GHz/200 GHz*
TL;DR: In this paper, a stress-engineered compressive SiN trench technology was used to achieve a high f T/f max of 128 GHz/255 GHz, which is the highest value among the reported E-mode AlGaN/GaN HEMTs.