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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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Journal ArticleDOI
Method of evaluating interface traps in Al 2 O 3 /AlGaN/GaN high electron mobility transistors
Si-Qin-Gao-Wa Bao,Si-Qin-Gao-Wa Bao,Xiaohua Ma,Wei-Wei Chen,Ling Yang,Bin Hou,Qing Zhu,Jiejie Zhu,Yue Hao +8 more
Journal ArticleDOI
In situ observation and investigation on the formation mechanism of nanocavities in TiO2 nanofibers
TL;DR: In this paper, the formation and evolution mechanism of nanocavities generated on the surface of TiO2 nanofibers during the phase transformation were investigated through ex situ and in situ transmission electron microscopy and X-ray diffraction.
Journal ArticleDOI
Gel Polymer Electrolyte with Anion‐Trapping Boron Moieties via One‐Step Synthesis for Symmetrical Supercapacitors
Journal ArticleDOI
New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes
TL;DR: In this paper, the effect of electrical stress on the forward conduction mechanism of UV-A light emitting diodes has been studied using temperature-dependent current-voltage measurement and the variation of trap physical parameters has been monitored using deep level transient spectroscopy (DLTS) measurement.
Proceedings ArticleDOI
Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs
Ling Yang,Bin Hou,Minhan Mi,Jiejie Zhu,Meng Zhang,Qing Zhu,Yunlong He,Lixiang Chen,Xiaowei Zhou,Xiaohua Ma,Yue Hao +10 more
TL;DR: In this paper, the reliability of traditional T-gate AlGaN/GaN high electron mobility transistor (HEMT) fabricated by the low power fluorine plasma treatment was investigated by applying the off-state high electric field stress.