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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application
TL;DR: In this paper, the authors investigated the noise performance of Ni/GaN Schottky barrier impactionization-avalanche-transit-time (IMPATT) diodes based on the polar and nonpolar-oriented wurtzite GaN by a numerical simulation.
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8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
Jielong Liu,Jiejie Zhu,Minhan Mi,Qing Zhu,Siyu Liu,Peng-Fei Wang,Yuwei Zhou,Ziyue Zhao,Jiuding Zhou,Peng Zhang,Mei Wu,Bin Hou,Hong Fu Wang,Ling Yang,Xiaohua Ma,Yue Hao +15 more
TL;DR: In this paper , a Si-rich SiN passivation layer was proposed for high-electron-mobility transistors (HEMTs) to reduce the deep-level surface traps by mitigating the formation of Ga-O bonds.
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Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
TL;DR: In this article, the influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasmaenhanced chemical vapor deposition (PECVD) system is presented.
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
Xue-Feng Zheng,Fan Shuang,Yong-He Chen,Di Kang,Jian-Kun Zhang,Chong Wang,Jiang-Hui Mo,Liang Li,Xiaohua Ma,Jincheng Zhang,Yue Hao +10 more
TL;DR: In this paper, the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298-K to 423-K.