Xiaohua Ma

TL;DR: In this paper , the effect of hydrogen on the performance of a Schottky barrier diode (SBD) was studied for the first time and it was found that the electrical performance of the SBD changed significantly after hydrogen treatment, including the turn-on voltage and the forward current density.

TL;DR: In this paper , a facile laser trimming method was proposed to insulate single-layer MoS 2 regions from thicker ones by patterning channels with regular geometry and electrically disconnected from the thicker areas.

TL;DR: In this paper, a fast-IV-sweep method was used to investigate the threshold voltage stability under positive gate stress, with the range of stress time from $1\mu \mathrm{s} to 1000s, which is more accuracy for GaN-based recessed MOS HEMTs.

TL;DR: In this paper, a preparation method of high performance reduced graphene for producing the electrode of a super capacitor was proposed, which achieved an electric capacity of up to 290 F/g. The preparation method comprises the following steps: taking commercial oxidized graphene as the initial raw material, dehydrating the commercial oxidised graphene in advance; reacting the preprocessed oxidized oxide with titanium borohydride in a solvent.

TL;DR: In this paper , an improved RF power performance of InAlN/GaN HEMT is achieved by optimizing rapid thermal annealing (RTA) process for high performance low voltage terminal applications.