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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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Journal ArticleDOI
Corrigendum: The influence of lightly-doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT (2022 Semicond. Sci. Technol. 37 075005)
Kai Liu,Runhao Wang,Chong Wang,Xue-Feng Zheng,Xiaohua Ma,Junchun Bai,Bin Cheng,Ruiyu Liu,Ang Li,Yaopeng Zhao,Yue Hao +10 more
Journal ArticleDOI
The effect of fumed silica in the polymer gel electrolyte on the cycle efficiency of lithium deposition/striping process
TL;DR: In this article, the effect of fumed silica on the cycle efficiency of lithium deposition/striping at stainless steel (SS) electrode was investigated by cyclic voltammetry (CV), FTIR and electrochemical AC impedance.
Journal ArticleDOI
High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer
Mao Jia,Bin Hou,Ling Yang,Fuchun Jia,Xuerui Niu,Jiale Du,Qingyuan Chang,Peng Zhang,Mei Wu,Xinchuang Zhang,Hao Lu,Xiaohua Ma,Yue Hao +12 more
Proceedings ArticleDOI
Relaxed Ge 0.97 Sn 0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain
TL;DR: In this article, a relaxed Ge 097 Sn 003 pTFET using uniaxial tensile strain along channel direction has been proposed to improve the I ON of the GeSn planer.
A new lateral AlGaN/GaN Schottky barrier diode combining with floating metal rings and P-guard rings for high breakdown voltage
TL;DR: In this article , a lateral AlGaN/GaN Schottky barrier diode combining floating metal rings (FMR) and P-guard rings (PGR) structures (PGFMR-SBD) is proposed.