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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
Papers
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Journal ArticleDOI
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity
Lu Hao,Bin Hou,Ling Yang,Xuerui Niu,Zeyan Si,Meng Zhang,Mei Wu,Minhan Mi,Qing Zhu,Kai Cheng,Xiaohua Ma,Yue Hao +11 more
TL;DR: In this paper, the GaN/InGaN/GaN coupling-channel high electron mobility transistor (CC-HEMT) was used for high-frequency applications.
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High performance transient organic solar cells on biodegradable polyvinyl alcohol composite substrates
He Xi,Dazheng Chen,Ling Lv,Peng Zhong,Zhenhua Lin,Jingjing Chang,Hong Wang,Bin Wang,Bin Wang,Xiaohua Ma,Chunfu Zhang +10 more
TL;DR: In this article, the first demonstration of transient organic solar cells (OSCs) fabricated on polyvinyl alcohol (PVA) composite substrates is reported, where a power conversion efficiency up to 2.05% is obtained for OSCs fabricated on a PVA/sucrose substrate with a ratio of 2':'1 (PS2), which is comparable to that of the reference devices on glass substrates (2.37%).
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Ultrathin paper-like boron-doped carbon nanosheet electrodes combined with boron-enriched gel polymer electrolytes for high-performance energy storage
TL;DR: In this article, a novel design of all-solid-state symmetric supercapacitors (SCs) based on free-standing ultrathin boron-doped graphene paper (B-GP) electrodes with B-enriched gel polymer electrolytes (GPEs) is presented.
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Size-controllable porous flower-like NiCo2O4 fabricated via sodium tartrate assisted hydrothermal synthesis for lightweight electromagnetic absorber.
TL;DR: In this article, the authors reported the fabrication of porous flower-like pure NiCo2O4 via simple hydrothermal reaction with the assistant of sodium tartarate in where tartaric acid served as a structure-directing agent.
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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of high electron mobility transistors (HEMTs).